客服热线:18202992950

Nitride phosphor and its production method 发明申请

2023-10-17 4550 1077K 0

专利信息

申请日期 2026-03-27 申请号 JP2021100992
公开(公告)号 JP2022031132A 公开(公告)日 2022-02-18
公开国别 JP 申请人省市代码 全国
申请人 日亜化学工業株式会社
简介 [Problem]We provide a method for producing nitride phosphors that can exhibit high luminescence intensity. [Solution means] A compound containing at least one rare earth element selected from the group consisting of Y, La, Ce, Lu and Gd is heat treated at a temperature within a range of 800 ° C. or more and 1800 ° C. or less to obtain a first heat treatment product having a crystaltron diameter of 150 nm or more, and the first heat treatment material and, if necessary, Y, as a raw material including the first heat treatment material and as necessary. It is a method for producing a nitride phosphor comprising a M source comprising at least one rare earth element M selected from the group consisting of Lu and Gd, a Mixture prepared so that the raw material includes a La source, a Si source, a Ce source, and a preparation composition indicated by the composition formula LawMxSi6Ny : Cez is heat treated at a temperature within a range of 1200 ° C. or more and 1800 ° C. or less. However, in the composition formula, w, x, y and z are 0. 5≦w≦4. 5、0<x≦1. 5、0≦y≦12、0<z≦1. 5、0. 15<(x+z)<3. 0、3. 0≦(w+x+z)≦7. Meet 5. [Selection Figure]Figure 3


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4