| 简介 |
The present invention relates to a surface modification method using a rare earth oxide thin film. More particularly, the present invention relates to a method of forming a rare-earth oxide thin film by depositing a rare-earth oxide (Y_2O_3) to a predetermined thickness on an inorganic material (Si, SiO_2, Pt) substrate by plasma atomic layer deposition (PE-ALD), thereby stably maintaining the hydrophobic surface even at a high temperature, minimizing the damage of the substrate during the growth of the thin film by the PE-ALD process, and appropriately controlling the final hydrophobic properties of the deposition surface according to the hydrophobic characteristics of the specific lower substrate.COPYRIGHT KIPO 2017 |
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