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Photoresist composition, a resist pattern forming method, polymer and compound 发明授权

2023-04-04 1610 1334K 0

专利信息

申请日期 2025-07-18 申请号 JP2013202404
公开(公告)号 JP6149656B2 公开(公告)日 2017-06-21
公开国别 JP 申请人省市代码 全国
申请人 JSR株式会社
简介 PROBLEM TO BE SOLVED : To provide a photoresist composition excellent in focal depth and defect suppressing property.SOLUTION : The photoresist composition comprises a first polymer having a first structural unit expressed by formula (1), and an acid generator. In formula (1), Rrepresents a divalent alicyclic hydrocarbon group having 3 to 20 carbon atoms; in Rand R, Rrepresents a monovalent hydrocarbon group having 1 to 20 carbon atoms and Rrepresents a divalent connecting group having 1 to 20 carbon atoms, or Rand Rare coupled to represent a cyclic structure having 3 to 20 members constituted together with a carbon atom to which both groups are bonded.


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