| 简介 |
The present invention relates to a semiconductor device manufacturing method capable of reducing a contact resistance between a source/drain area and a gate electrode to improve operation performance. The semiconductor device manufacturing method according to an aspect of the present invention comprises : providing an exposed silicon area; forming a rare earth metal silicide film being in contact with the silicon area in the exposed silicon area; and forming a contact being electrically in contact with the exposed silicon area on the rare earth metal silicide film. The rare earth metal silicide film provides the rare earth metal and silicon at the same time in the exposed silicon area by using a physical vapor deposition method.COPYRIGHT KIPO 2017 |
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