| 简介 |
PROBLEM TO BE SOLVED : To provide a thin film producing method, in which the change of the film quality of a thin film is suppressed by a plasma varying during film formation by using a sputtering.SOLUTION : The formation of a thin film is performed by a sputtering on a member to be processed, by using a first rare gas and a second rare gas of mutually different elements of 18-th elements. While this thin film is being formed, there is determined the emission intensity ratio of the element of said first rare gas and the element of said second rare gas in a plasma to be produced in a film deposition chamber. In accordance with that emission intensity ratio, the electron temperature of said plasma is adjusted to adjust the film quality of said thin film either by feeding a third rare gas different from said first rare gas and said second rate gas of the 18-th elements, or the supply of said third rare gas is adjusted so that the electron temperature of said plasma is adjusted to adjust the film quality of said thin film.SELECTED DRAWING : Figure 1COPYRIGHT : (C)2017, JPO&INPIT |
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