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Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a 发明授权

2023-03-26 3790 3160K 0

专利信息

申请日期 2025-06-27 申请号 US14161564
公开(公告)号 US9679765B2 公开(公告)日 2017-06-13
公开国别 US 申请人省市代码 全国
申请人 Avago Technologies General IP (Singapore) Pte Ltd
简介 A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes : providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.


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