| 简介 |
The present invention provides a one time programmable (OTP) memory device, a manufacturing method thereof, and an electronic device the same, which increase efficiency of a programming by decreasing programming voltage, increase reliability of peripheral I/O elements used for design of the OTP memory device, and simplify the design. The OTP memory device includes a transistor configured as any one structure from a first gate structure comprising a high dielectric layer, an RE supply layer, and a second metal layer, a second gate structure comprising the high dielectric layer, a first metal layer, and the second metal layer, and a third gate structure comprising the high dielectric layer and the second metal layer.COPYRIGHT KIPO 2017 |
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