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Manufacturing Of Sintered Silicon Nitride Body With High Thermal Conductivity 发明申请

2023-08-10 4820 460K 0

专利信息

申请日期 2025-08-14 申请号 KR1020150169343
公开(公告)号 KR1020170063223A 公开(公告)日 2017-06-08
公开国别 KR 申请人省市代码 全国
申请人 KOREA INSTITUTE OF MACHINERY MATERIALS
简介 Disclosed is a method for manufacturing a sintered body of silicon nitride with high thermal conductivity. The present invention provides a method for manufacturing a sintered body of silicon nitride comprising the following steps : preparing raw material powder, comprising oxide of at least two kinds of rare earth metal selected from the group consisting of silicon nitride, Y, Sc, Nd, and Yb, in accordance with a mixing formula represented by xSi_3N_4-yA_2O_3-zB_2O_3, wherein x, y, and z are mol%, and each of x, y, z are more than 0, and A and B are independently selected rare earth metal; mixing the mixed raw material powder; molding the mixed raw material powder; and sintering the molded body. According to the present invention, the sintered body of silicon nitride having high thermal conductivity and a grain boundary phase can be manufactured.COPYRIGHT KIPO 2017


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