| 申请日期 | 2025-06-26 | 申请号 | US14847265 |
| 公开（公告）号 | US9673281B2 | 公开（公告）日 | 2017-06-06 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | M/A COM Technology Solutions Holdings Inc | ||
| 简介 | III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates. | ||
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