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Sputtering Target 发明申请

2022-12-28 3420 5488K 0

专利信息

申请日期 2025-06-27 申请号 KR1020227000278
公开(公告)号 KR1020220018547A 公开(公告)日 2022-02-15
公开国别 KR 申请人省市代码 全国
申请人 FURUYA METAL CO LTD
简介 The purpose of the present disclosure is to provide a sputtering target which suppresses a chlorine element, which is foreign matter, from being mixed into the sputtering target, wherein when a thin film is formed using the sputtering target, the occurrence of abnormal discharge due to chlorine can be suppressed, and a thin film having good orientation can be formed. The sputtering target of the present disclosure contains aluminum and further contains either or both of a rare earth element and a titanium group element, and the content of chlorine is 100 ppm or less.


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