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Electrostatic chuck and manufacturing method therefor 发明授权

2023-07-25 4380 682K 0

专利信息

申请日期 2025-06-28 申请号 US16973112
公开(公告)号 US11251061B2 公开(公告)日 2022-02-15
公开国别 US 申请人省市代码 全国
申请人 KSM COMPONENT CO LTD; FLOWSERVE KSM CO LTD
简介 Disclosed are : an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.


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