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CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTOR SENSORS 发明申请

2023-02-21 4460 240K 0

专利信息

申请日期 2025-06-29 申请号 US15366353
公开(公告)号 US20170146483A1 公开(公告)日 2017-05-25
公开国别 US 申请人省市代码 全国
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
简介 A system and method for chemical sensing of multiple gases or vapors with an array of chemical sensitive field effect transistor (CS-FET) devices that are highly sensitive, small in size and have low energy consumption. The sensor layer is an ultrathin film of transition metal oxide, rare earth metal oxide or metal nanoparticles that is formed between the source and drain electrodes on a silicon substrate. The work functions of the sensor layer can be manipulated by the adsorption of chemicals onto their surfaces. These changes cause a change in the surface potential of the underlying Si channel, leading to the current modulation of the devices. By selecting appropriate sensor layers, different chemicals will produce different output signals. External signal processing of these signals enables and sensor and array profile matching permits multi-gas detection.


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