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LAYER STRUCTURES FOR RF FILTERS FABRICATED USING RARE EARTH OXIDES AND EPITAXIAL ALUMINUM NITRIDE 发明申请

2023-02-22 1300 2561K 0

专利信息

申请日期 2025-06-28 申请号 WOUS16060187
公开(公告)号 WO2017083150A1 公开(公告)日 2017-05-18
公开国别 WO 申请人省市代码 全国
申请人 IQE PLC; PELZEL Rodney; DARGIS Rytis; CLARK Andrew; WILLIAMS Howard; CHIN Patrick; LEBBY Michael
简介 Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure (300) can include an epitaxial crystalline rare earth oxide (REO) layer (306) over a substrate (302), a first epitaxial electrode layer (310) over the crystalline REO layer (306), and an epitaxial piezoelectric layer (312) over the first epitaxial electrode layer (310). The layer structure (300) can further include a second electrode layer (314) over the epitaxial piezoelectric layer (312). The first electrode layer (310) can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer (310) can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).


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