| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing an epitaxial SiC wafer which allows for epitaxial growth of a SiC single crystal thin film with excellent productivity while suppressing variation in doping density, by using a substrate processing apparatus of vertical arrangement structure.SOLUTION : In a method of manufacturing an epitaxial silicon carbide wafer, doping gas is supplied while mixing a rare gas as a carrier gas, when forming a silicon carbide single crystal thin film on the surface of each silicon carbide single crystal substrate by a thermal CVD method, where a silicon material gas, a carbon material gas, and a doping gas are introduced individually through a silicon material gas introduction pipe, a carbon material gas introduction pipe, and a doping gas introduction pipe arranged vertically in a growth chamber, and gas outlets are provided at positions corresponding to the gaps between the silicon carbide single crystal substrates where the gas introduction pipes are arranged vertically. |
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