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METHOD OF PRODUCING DOUBLE-DOPED SCINTILLATION CRYSTAL 发明申请

2023-03-25 4770 204K 0

专利信息

申请日期 2025-06-28 申请号 US15252231
公开(公告)号 US20170088977A1 公开(公告)日 2017-03-30
公开国别 US 申请人省市代码 全国
申请人 NATIONAL SUN YAT SEN UNIVERSITY
简介 A method of producing a double-doped scintillation crystal is provided. Czochralski method is used to grow a double-doped single crystal boule. The double-doped single crystal boule is a single crystal boule of rare-earth silicate double-doped with cerium (Ce) and calcium (Ca) or magnesium (Mg). The double-doped single crystal boule is subjected to a thermal annealing process in a furnace. A yield of pixel samples of the double-doped scintillation crystal is improved after a processing process, and the present invention achieves low producing cost, high yield, less crystal fragmentations, high luminescence intensity and short decaying time.


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