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Method of manufacturing a semiconductor ceramic composition, semiconductor ceramic composition, PT 发明申请

2023-08-24 4570 137K 0

专利信息

申请日期 2025-06-29 申请号 JP2015559948
公开(公告)号 JPWO2015115421A1 公开(公告)日 2017-03-23
公开国别 JP 申请人省市代码 全国
申请人 日立金属株式会社
简介 Provided is a novel manufacturing method which can perform adjustment so that the Curie temperature of a semiconductor ceramic composition becomes higher, and the room temperature resistivity ρ becomes lower. The method is a manufacturing method for a semiconductor ceramic composition in which a (BiA)TiO3 (A is at least one from among Na, Li, and K) calcined powder and a (BaR)[TiM]O3 (R is at least one from among the rare-earth elements including Y, M is at least one from among Nb, Ta, and Sb, and either R or M is required) calcined powder are prepared, the (BiA)TiO3 calcined powder and the (BaR)[TiM]O3 calcined powder are mixed, and subsequently, molding and sintering are performed, said manufacturing method for a semiconductor ceramic composition characterized in that prior to the mixing of the (BiA)TiO3 calcined powder and the (BaR)[TiM]O3 calcined powder, a/b ≥ 2.0 is satisfied, where a is the BET value of the (BiA)TiO3 calcined powder and b is the BET value of the (BaR)[TiM]O3 calcined powder.


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