| 申请日期 | 2025-06-28 | 申请号 | JP2021532480 |
| 公开（公告）号 | JP2022512155A | 公开（公告）日 | 2022-02-02 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | ハンソル ケミカル カンパニー リミテッド | ||
| 简介 | The present invention relates to a compound capable of thin film deposition through vapor deposition and, specifically, to a rare earth compound, which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor comprising same, a manufacturing method therefor, and a method for forming a thin film by using same. | ||
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