| 申请日期 | 2025-07-07 | 申请号 | US14305502 |
| 公开（公告）号 | US9589827B2 | 公开（公告）日 | 2017-03-07 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | International Business Machines Corporation | ||
| 简介 | A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor structures on either side of the crystalline structure. Crystalline oxides may include rare earth oxides, aluminum oxides or Perovskites. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
