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Method for producing high-purity neodymium, highly pure neodymium, a sputtering target consisting 发明授权

2023-12-06 4120 3504K 0

专利信息

申请日期 2025-08-07 申请号 JP2013066337
公开(公告)号 JP6087186B2 公开(公告)日 2017-03-01
公开国别 JP 申请人省市代码 全国
申请人 JX金属株式会社
简介 PROBLEM TO BE SOLVED : To provide a technique capable of providing, both efficiently and stably, a high-purity neodymium, a sputtering target comprising a high-purity neodymium, and a thin film for a rare earth magnet using a high-purity neodymium as a component.SOLUTION : In a method for manufacturing a high-purity neodymium having a gas component-excluded purity of 4N5 or higher, a neodymium batch having a purity of 4N or higher is prepared by reducing, with distilled calcium, a raw neodymium fluoride ingredient having a gas component-excluded purity of 4N or higher, and after the neodymium has been skull-melted and then cooled gradually so as to prepare a neodymium ingot, the obtained skull ingot is cut so as to remove therefrom a bottom portion in which a segregated oxide layer segment exists, and the remaining neodymium ingot is melted with electron beams so as to remove therefrom volatile substances. The method for manufacturing a high-purity neodymium stipulates a C content of 100 wt.ppm or less, an O content of 50 wt.ppm or less, Al and Fe contents of 10 wt.ppm or less each, and a Cu content of 1 wt.ppm or less.


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