| 申请日期 | 2025-06-25 | 申请号 | US14034315 |
| 公开（公告）号 | US9583369B2 | 公开（公告）日 | 2017-02-28 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Applied Materials Inc | ||
| 简介 | A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less. | ||
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