| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing a bismuth-substituted type rare earth iron garnet crystal film that can suppress breaking and cracking in cooling to a room temperature after raising the bismuth-substituted type rare earth iron garnet crystal film.SOLUTION : The present invention relates to a method of manufacturing a bismuth-substituted type rare earth iron garnet crystal film on a nonmagnetic garnet substrate 16 in a liquid-phase epitaxial growing method, the method of manufacturing the bismuth-substituted type rare earth iron garnet crystal film having a temperature falling rate of 200.0°C/hr and also suppressing radiant heat from a melt 13 from reaching the raised bismuth-substituted type rare earth iron garnet crystal film more than when a surface of the melt and the raised bismuth-substituted type rare earth iron garnet crystal film are so arranged as to directly face each other in a cooling process in which a shield plate 17 is arranged between a seed crystal substrate 16 and a crucible base 12 and cooling is carried out from a raising temperature to a room temperature after a raising process of raising the bismuth-substituted type rare earth iron garnet crystal film is completed.SELECTED DRAWING : Figure 1COPYRIGHT : (C)2017, JPO&INPIT |
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