| 简介 |
PROBLEM TO BE SOLVED : To provide a field effect transistor that has an excellent TFT characteristics, can keep this state even after a protection layer forming step has been performed, and has a smaller variation amount of a threshold voltage for a BTS test.
SOLUTION : A field effect transistor includes a base material, a protective layer, a gate insulating layer formed between the base material and the protective layer, a source electrode and a drain electrode which are formed to be in contact with the gate insulating layer, a semiconductor layer which is formed between at least the source electrode and the drain electrode to be in contact with the gate insulating layer, the source electrode, and the drain electrode, and a gate electrode which is in contact with the gate insulating layer and faces the semiconductor layer via the gate insulating layer. The protective layer contains a first complex metal oxide containing alkaline earth metal and a rare earth element, and the gate insulating layer contains a second complex metal oxide containing alkaline earth metal and a rare earth element.
SELECTED DRAWING : Figure 3A
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