申请日期 | 2025-06-28 | 申请号 | US15300757 |
公开(公告)号 | US20170022632A1 | 公开(公告)日 | 2017-01-26 |
公开国别 | US | 申请人省市代码 | 全国 |
申请人 | Franck NATALI; Benjamin John RUCK; Harry Joseph TRODAHL; Stéphane Ange VÉZIAN | ||
简介 | Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices. |
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