| 简介 |
A field-effect transistor including : a substrate 21; a passivation layer 27; a gate insulating layer 23 formed between the substrate 21 and the passivation layer 27; a source electrode 24 and a drain electrode 25, which are formed to be in contact with the gate insulating layer 23; a semiconductor layer 26 formed at least between the source electrode 24 and the drain electrode 25 and is in contact with the gate insulating layer 23, the source electrode 24, and the drain electrode 25; and a gate electrode 22, which is in contact with the gate insulating layer 23 and faces the semiconductor layer 26 via the gate insulating layer 23, wherein the passivation layer 27 contains a first complex oxide containing an alkaline earth metal and a rare-earth element and the gate insulating layer 23 contains a second complex oxide containing an alkaline earth metal and a rare-earth element. |
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