| 申请日期 | 2025-08-17 | 申请号 | JP2013036757 |
| 公开（公告）号 | JP6061272B2 | 公开（公告）日 | 2017-01-18 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | 国立研究開発法人物質・材料研究機構 | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a thermoelectric semiconductor which can be used in a high-temperature region and which exhibits thermoelectric characteristics of both n-type and p-type by change of a composition ratio.SOLUTION : A thermoelectric semiconductor uses a rare-earth aluminoboride YAlB(where 0.49 | ||
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