| 简介 |
PROBLEM TO BE SOLVED : To provide a rectifying semiconductor element, a photoelectric conversion element, a solar cell and the like, which are excellent in chemical stability and long term durability by achieving a p-type semiconductor thin film comprising an oxide.
SOLUTION : A p-type semiconductor is achieved using an oxide semiconductor thin film that has a perovskite-type related structure and contains one or two or more elements among Co, Rh, Ru, Mn and Ir, a rare earth element, and an alkali earth metal element. A specific composition of the oxide semiconductor thin film is represented by chemical formula : (RE1-xAEx)M1O3 or (AE1-yREy)2M2O4 (where, RE represents one or two or more elements among rare earth elements (Sc, Y, lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu)), AE represents one or two or more elements among alkali earth metal elements of Ca, Sr, and Ba, M1, M2 represent one or two or more elements among Co, Rh, Ru, Mn and Ir, and 0
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