| 简介 |
PROBLEM TO BE SOLVED : To provide a light emitting diode which is excellent in chemical stability and long term durability by achieving a p-type semiconductor thin film comprising an oxide.
SOLUTION : In a light emitting diode including a p-type semiconductor layer, a light emitting layer and an n-type semiconductor layer, the p-type semiconductor layer comprises an oxide semiconductor thin film that has a perovskite-type related structure and contains one or two or more elements among Co, Rh, Ru, Mn and Ir, a rare earth element, and an alkali earth metal element. A specific composition of the oxide semiconductor thin film is represented by chemical formula : (RE1-xAEx)M1O3 or (AE1-yREy)2M2O4 (where, RE represents one or two or more elements among rare earth elements, AE represents one or two or more elements among alkali earth metal elements of Ca, Sr, and Ba, M1, M2 represent one or two or more elements among Co, Rh, Ru, Mn and Ir, and 0
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