| 简介 |
A production method of a substrate for nitride semiconductor device comprising a mask formation step of using a metal nitride as a base material and forming a mask having a prescribed shape on the above-described base material, a three-dimensional structure growth step of growing a three-dimensional structure made of the same material as the base material on the base material having the mask formed thereon using a selective growth technique so that a layer having a higher index plane is formed on the lateral face, and an active layer growth step of growing an active layer containing a rare earth element on the lateral face of the above-described three-dimensional structure using an organometallic vapor phase epitaxial method. |
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