| 简介 |
PROBLEM TO BE SOLVED : To provide a deposition method of a gallium oxide film by using a DC sputtering method; and provide a manufacturing method of a semiconductor device using a gallium oxide film as an insulation layer such as a gate insulation layer of a transistor.
SOLUTION : In an insulation film manufacturing method an insulation film is formed by a DC sputtering method or a DC pulse sputtering method by using an oxide target composed of a gallium oxide (also represented as GaOx). The oxide target is composed of GaOx where x is less than 1.5, preferably not less than 0.01 and not more than 0.5, further preferably not less than 0.1 and not more than 0.2. The oxide target has conductivity and sputtering is performed in an oxygen gas atmosphere or in an atmosphere of mixture of an oxygen gas and a rare gas such as argon.
SELECTED DRAWING : Figure 1
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