| 简介 |
PROBLEM TO BE SOLVED : To provide a method of processing an object to be processed.
SOLUTION : A method of processing an object to be processed includes a first step of supplying a first gas containing a silicon-containing gas into a processing container housing an object to be processed, a second step of generating plasma of rare gas in the processing container, after execution of the first step, a third step of generating plasma of second gas containing the oxygen gas in the processing container, after execution of the second step, and a fourth step of generating plasma of rare gas in the processing container, after execution of the third step. In this method, a silicon oxide film is formed by executing a sequence including the first through fourth steps repeatedly. Furthermore, in this method, a negative DC voltage is applied to the upper electrode of a capacity coupling plasma processing apparatus, in at least any one of the second, third and fourth steps.
SELECTED DRAWING : Figure 1
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