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Method and system for providing rare earth magnetic junctions usable in spin transfer torque magneti 发明授权

2023-04-27 4060 1632K 0

专利信息

申请日期 2025-06-27 申请号 US14731267
公开(公告)号 US9508924B2 公开(公告)日 2016-11-29
公开国别 US 申请人省市代码 全国
申请人 Samsung Electronics Co LTD
简介 A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.


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