| 简介 |
Provided is a method to process a processing object. A method in an embodiment includes : a first process of supplying first gas, including silicon gas, into a processing container storing a processing object; a second process of generating plasma of noble gas in the processing container after the execution of the first process; a third process of generating plasma of second gas, including oxygen gas, in the processing container after the execution of the second process; and a fourth process of generating plasma of the noble gas in the processing container after the execution of the third process. In the method, a silicon oxide film is formed by repetitively executing a sequence including the first to fourth processes. Moreover, in the method, a negative DC voltage is applied to an upper electrode of a capacity coupling plasma processing device in regard to at least one among the second, third, and fourth processes. |
客服热线：
手机版
二维码
