| 简介 |
The present invention provides a semiconductor device and a method for manufacturing the same having the reliability of the semiconductor device and various threshold voltages without deterioration. The semiconductor device includes : a semiconductor substrate; an active area which is formed on the upper part of the semiconductor substrate; and a gate structure which is extended through the active area on the semiconductor substrate and is sequentially stacked on an interfacial layer, a high dielectric layer, a rare earth element (RE) supply layer, a first metal layer with an RE, and a second metal layer. The present invention ensures the reliability of the semiconductor device and has various threshold voltages without characteristic deterioration. |
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