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R-T-B-BASED THIN FILM PERMANENT MAGNET 发明申请

2023-05-02 4810 184K 0

专利信息

申请日期 2025-07-08 申请号 JP2015066291
公开(公告)号 JP2016186990A 公开(公告)日 2016-10-27
公开国别 JP 申请人省市代码 全国
申请人 TDK CORP
简介 PROBLEM TO BE SOLVED : To provide a thin film permanent magnet excellent in the magnetic characteristics, compared with a conventional R-T-B-based thin film permanent magnet. SOLUTION : An R-T-B-based thin film permanent magnet excellent in the magnetic characteristics is obtained because the composition of a thin film on a Mo base is (R11-xR2x)-T-B, main phase particles (2-14-1 phase) and a grain particle phase α are included, and the cross-sectional area ratio of the grain particle phase α is 30% or more in a region of 10 nm thickness to the magnetic layer side from the interface of the Mo base and magnetic layer, where R1 is at least one kind of rare earth element not containing Y and Ce, R2 is a rare earth element composed of one kind or more of Y and Ce, T is Fe or one kind or more of transition metal element where Fe and Co are essential, x is 0.5 or less (not containing 0). The grain particle phase α is one kind of R-rich phase existing in the grain boundary, and 70 at% or more of the rare earth elements contained in the α is R2. SELECTED DRAWING : Figure 1 COPYRIGHT : (C)2017, JPO&INPIT


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