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METHOD FOR MANUFACTURING BISMUTH SUBSTITUTION RARE EARTH IRON GARNET SINGLE CRYSTAL FILM, FARADAY R 发明申请

2023-05-23 1560 247K 0

专利信息

申请日期 2025-07-01 申请号 JP2020115646
公开(公告)号 JP2022013228A 公开(公告)日 2022-01-18
公开国别 JP 申请人省市代码 全国
申请人 SHINETSU CHEMICAL CO
简介 To provide a method for manufacturing a bismuth substitution rare earth iron garnet single crystal film, capable of preventing a fracture, etc., from occurring.SOLUTION : A bismuth substitution rare earth iron garnet single crystal film is represented by the composition formula (Ln3-aBia)(Fe5-bAb)O12. A method for manufacturing the bismuth substitution rare earth iron garnet single crystal film comprises steps of : forming a buffer layer having an average lattice constant Lb (where, Lb>Ls) on the surface of a paramagnetic garnet substrate having a lattice constant Ls at a thickness of 5-30 μm; and growing the bismuth substitution rare earth iron garnet crystal film of 100 μm or more superimposed on the buffer layer and having an average lattice constant Lf (where, Lf>Lb) set as a target. The rate of change of lattice constant in the buffer layer is steeper as compared with that in the bismuth substitution rare earth iron garnet crystal film.SELECTED DRAWING : Figure 1


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