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Organic semiconductor material, and, org. transistor 发明授权

2023-07-07 1710 164K 0

专利信息

申请日期 2026-04-22 申请号 JP2012198412
公开(公告)号 JP6009287B2 公开(公告)日 2016-10-19
公开国别 JP 申请人省市代码 全国
申请人 DIC株式会社; 国立大学法人東京工業大学
简介 PROBLEM TO BE SOLVED : To provide an organic semiconductor material which can suppress variation in the mobility during deposition, while having a high charge mobility.SOLUTION : An organic semiconductor material is represented by a general formula (1) (In the formula, R, Rare independently an alkyl group of 2-20C, an alkenyl group of 2-20C, an alkyl group of 2-20C having a halogen atom, an alkoxy alkyl group of 3-20C, an alkyl sulfanil alkyl group of 3-20C, an aromatic ring or a heteroaromatic ring, an aromatic ring or a heteroaromatic ring having an alkyl group of 2-20C or an alkenyl group of 2-20C as a substituent group, an aromatic ring or a heteroaromatic ring having an alkyl group of 2-20C or an alkenyl group of 2-20C having a halogen atom as a substituent group, and the like).


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