| 简介 |
PROBLEM TO BE SOLVED : To provide an Al alloy film for a display device or a semiconductor device that is excellent in high temperature resistance even if exposed to a high temperature of 450-600°C, low in electric resistance, and excellent in corrosion resistance in an alkaline environment.SOLUTION : An Al alloy film of the present invention comprises : Ge; at least one element selected from an X group consisting of Ta, Ti, Zr, Hf, W, Cr, Nb, Mo, Ir, Pt, Re, and Os; and at least one rare earth element selected from Ce, Nd, Sm, Gd, and Dy. When subjected to heat treatment at 450-600°C, the Al alloy film satisfies the following requirements (1) and (3) : (1) in a first deposit containing Al, one element of the X group, and Ge, deposits having a circle-equivalent diameter of 50 nm or more exist in a density of 200, 000 pieces/mmor more; and (3) in a third deposit containing Al, one element of the X group, and one of the rare earth elements, deposits having a circle-equivalent diameter of 10 nm or more exist in a density of 1, 000, 000 pieces/mmor more. |
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