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Faraday rotator 发明授权

2023-04-20 1100 90K 0

专利信息

申请日期 2025-09-12 申请号 JP2013187018
公开(公告)号 JP5991491B2 公开(公告)日 2016-09-14
公开国别 JP 申请人省市代码 全国
申请人 住友金属鉱山株式会社
简介 [Object] To provide a Faraday rotator excellent in productivity and also hardly causing an isolation function of an optical isolator to deteriorate even when the Faraday rotator is used in a high-power laser with a wavelength of 1.1 µm or less and an output of 1 W or more. [Solving Means] The Faraday rotator comprises : a non-magnetic garnet substrate 4; bismuth-substituted rare-earth iron garnet films 1 grown respectively on both surfaces of the non-magnetic garnet substrate by a liquid phase epitaxial method; and sapphire crystal substrates 2 bonded respectively to outer surfaces of the bismuth-substituted rare-earth iron garnet films, and configured to dissipate heat. The Faraday rotator is characterized in that the bismuth-substituted rare-earth iron garnet films have an absorption coefficient of 9 cm -1 or less for light at a wavelength of 1.06 µm, and that the bismuth-substituted rare-earth iron garnet films grown on the respective surfaces of the non-magnetic garnet substrate differ from each other in film thickness by 10 µm or less.


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