| 简介 |
To provide a manufacturing method of a rare earth hydride that produces a rare earth hydride semiconductor even at low temperature (particularly at room temperature) and in low concentration hydrogen atmosphere, and a thin film transistor in which a channel layer includes the rare earth hydride semiconductor.SOLUTION : A manufacturing method of a rare earth hydride includes a step A of sequentially forming, on an insulating substrate 11, a gate electrode 12, a gate insulating film 13 covering the gate electrode 12, a rare earth element film 14 arranged on the gate insulating film 13, a source electrode 17 and a drain electrode 18 arranged on the rare earth element film 14, a passivation film 19 covering the rare earth element film 14, the source electrode 17, and the drain electrode 18, and a platinum film 20 covering the passivation film 19, and a step B of heat-treating a laminated structure obtained through the step A in an atmosphere containing hydrogen.SELECTED DRAWING : Figure 8 |
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