| 简介 |
The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice. Axis orientation can be further utilized to control the uniformity of surface finish of chemically etched crystal. |
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