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A method of forming a metal silicide 发明授权

2023-05-06 1070 360K 0

专利信息

申请日期 2025-08-05 申请号 JP2012205508
公开(公告)号 JP5979667B2 公开(公告)日 2016-08-24
公开国别 JP 申请人省市代码 全国
申请人 国立研究開発法人物質・材料研究機構
简介 PROBLEM TO BE SOLVED : To provide a method for forming low-cost metal silicides which are required for putting solar cells using silicides such as BaSito practical use.SOLUTION : In the method for forming metal silicides, metal films of alkaline earth metals, alkali metals, rare-earth elements or the like are formed on a silicon substrate by utilizing that these metals and elements dissolve in liquid ammonia, and then, metal silicides are formed on the silicon substrate by heating the metal films. In this method, a high temperature and high vacuum process is not required, and metal films each having a thickness in a wide range can be formed by single application/immersion by adjusting the metal concentration in a liquid ammonia solution. Thereby, the silicides can be formed at extremely low cost and high throughput in comparison with a conventional process such as vapor deposition or MBE.


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