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TRANSITION METAL PNICTIDE COMPOUND AND MANUFACTURING METHOD THEREFOR 发明申请

2023-10-25 3940 157K 0

专利信息

申请日期 2025-06-28 申请号 JP2015027978
公开(公告)号 JP2016150861A 公开(公告)日 2016-08-22
公开国别 JP 申请人省市代码 全国
申请人 TOKYO INSTITUTE OF TECHNOLOGY
简介 PROBLEM TO BE SOLVED : To provide an itinerant electron antiferromagnetic compound having transition temperature of room temperature or more, antiferromagnetic property and metal conductivity and capable of controlling the transition temperature by partial substitution of constitutional elements, and a manufacturing method therefor. SOLUTION : There is provided an itinerant electron antiferromagnetic compound which is a transition metal pnictide compound represented by the chemical formula RETM2 PnN, where RE is at least one kind of rare earth element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Tm is at least one kind of transition metal element selected from Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Os, Ir and Pt, Pn is at least one kind of pnictide element selected from P, As, Sb and Bi and N is nitrogen, and consists of a crystal belonging to area groups of rhombic system Cmcm obtained by blending raw material with a ratio, by atom ratio, of RE : TM : Pn : N=1 : 2 : 1 : 1 and heat sintering at 800 to 1500°C under high pressure of 1 to 10 GPa. SELECTED DRAWING : Figure 1 COPYRIGHT : (C)2016, JPO&INPIT


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