| 申请日期 | 2025-06-28 | 申请号 | JP2016528590 |
| 公开（公告）号 | JP2016525066A | 公开（公告）日 | 2016-08-22 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | サントレ ナティオナル ド ラ ルシェルシェ シアンティフィク | ||
| 简介 | The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in particular in the optical field. | ||
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