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Crystal growth crucibles 发明授权

2023-11-17 2270 97K 0

专利信息

申请日期 2026-04-27 申请号 JP2014523142
公开(公告)号 JP5964963B2 公开(公告)日 2016-08-03
公开国别 JP 申请人省市代码 全国
申请人 プランゼー エスエー
简介 A crucible for growing crystals, in particular a sapphire single crystal, includes a base crucible made of W, Mo, Re or an alloy of these materials and an inner lining made of W, Mo, Re or an alloy of these materials. The base crucible has a substantially pot-like form. The inner lining has at least a pot-like first portion, which covers a bottom region of the base crucible, and a jacket-like second portion, which at least partially covers a wall region of the base crucible. The first portion and the second portion are formed by separate components. A process for growing sapphire single crystals using a crucible is also provided.


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