| 申请日期 | 2025-06-24 | 申请号 | JP2016507043 |
| 公开（公告）号 | JP2016522135A | 公开（公告）日 | 2016-07-28 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | サン ゴバン クリストー エ デテクトゥール | ||
| 简介 | y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties. | ||
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