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METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING THERMALLY ASSISTED SPIN TRANSFER TORQUE SWI 发明申请

2023-11-24 3430 849K 0

专利信息

申请日期 2025-06-28 申请号 KR1020160000896
公开(公告)号 KR1020160085219A 公开(公告)日 2016-07-15
公开国别 KR 申请人省市代码 全国
申请人 SAMSUNG ELECTRONICS CO LTD
简介 Provided are a magnetic junction usable in a magnetic apparatus and a method for providing the magnetic junction. The magnetic junction includes a multi layer, and includes a free layer switchable between a plurality of stable magnetic states when a write current flows through the magnetic junction, a nonmagnetic spacer layer, and a pinned layer. The spacer layer is arranged between the pinned layer and the free layer. The write current generates joule heating in the free layer such that the free layer has the switching temperature higher than the room temperature. The free layer has perpendicular magnetic anisotropy energy of the free layer which is greater than out-of-plane device energy of the free layer. The multi layer is sensitive to the temperature and includes at least one bilayer, in which each bilayer includes first and second layers, the first layer includes an alloy of a magnetic transition metal and a rare earth, and the second layer includes a magnetic layer. The multilayer has room temperature coercivity and switching temperature coercivity, in which the switching temperature coercivity is not more than one-half of the room temperature coercivity. In addition, the pinned layer has perpendicular magnetic anisotropy energy of the free layer which is greater than out-of-plane device energy of the free layer.COPYRIGHT KIPO 2016


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