| 简介 |
A rare earth element-doped silicon carbide powder, comprising a silicon carbide crystal phase and a rare earth element silicide, wherein the rare earth element silicide is doped in the silicon carbide crystal phase. The doping concentration of the rare earth element silicide in the silicon carbide crystal phase is 0.001-5 wt%. In the rare earth element-doped silicon carbide powder, the rare earth element silicide is doped in the silicon carbide crystal phase, so that the rare earth element is uniformly doped in the silicon carbide powder, and during crystal growth, the rare earth element is gradually released along with the sublimation of the silicon carbide powder, thus achieving the uniform doping of the rare earth element in terms of both time and space, and thereby effectively inhibiting the generation of polymorphic defects in the crystal; in addition, the rare earth element silicide is obtained by selecting and using an oxide of the rare earth element with a relatively high purity, so that the production cost of the rare earth element-doped silicon carbide powder is greatly reduced, and the product purity is improved. |
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