| 简介 |
Provided is a production method for a bismuth-substituted rare earth iron garnet single crystal film wherein a crack, or the like, does not occur readily. The bismuth-substituted rare earth iron garnet single crystal film production method according to the present invention uses a paramagnetic garnet substrate having a lattice constant Ls to grow the bismuth-substituted rare earth iron garnet single crystal film represented by composition formula (Ln3-aBia)(Fe5-bAb)O12. The bismuth-substituted rare earth iron garnet single crystal film production method comprises a step of forming on the substrate surface a buffer layer having a mean lattice constant Lb (with the proviso that Lb > Ls) to a thickness of 5 to 30 μm, and a step of growing, superimposed on the buffer layer, 100 μm or more of the target bismuth-substituted rare earth iron garnet crystal film having a mean lattice constant Lf (with the proviso that Lf > Lb). The invention is characterized by a steep lattice constant change rate in the buffer layer compared to the lattice constant change rate in the bismuth-substituted rare earth iron garnet crystal film. The proviso is that, in the composition formula : Ln is selected from among Y, an element selected from among lanthanoids (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), and a trace element selected from among Ca, Mg, Zr, and Hf; and A represents one or more elements selected from among Al, Ga, In, Sc, Ti, Si, Ge and Sn. |
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