| 申请日期 | 2025-06-28 | 申请号 | US14584001 |
| 公开（公告）号 | US20160190434A1 | 公开（公告）日 | 2016-06-30 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | International Business Machines Corporation | ||
| 简介 | A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element. | ||
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