| 简介 |
PROBLEM TO BE SOLVED : To provide a magnetic semiconductor device which has a structure capable of implanting a spin-polarized carrier and which operates with less current.
SOLUTION : A magnetic semiconductor device 11 includes a semiconductor region 13 and a first electrode 12. The semiconductor region 13 includes a magnetic semiconductor film 14. The magnetic semiconductor film includes a first magnetic semiconductor obtained by addition of a magnetic element 20 to the first semiconductor. The first electrode 12 forms Schottky junction 16 with the semiconductor region 13. The magnetic element 20 is at least one of transition metal of rare earth metal and the first electrode 12 includes a magnetic metal film.
SELECTED DRAWING : Figure 1
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